©2004 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
699440 Rev. A
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699440
High Voltage Power Darlington Transistor
Features
• Built-in Resistor at Base-Emitter: R
1
(Typ.) = 2000Ω
• Built-in Resistor at Base: R
B
(Typ.) = 700±100Ω
Absolute Maximum Ratings
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Electrical Characteristics T
C
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 600 V
V
CEO
Collector-Emitter Voltage 275 V
V
EBO
Emitter-Base Voltage 10 V
I
C
Collector Current (DC) 4 A
I
CP
* Collector Current (Pulse) 6 A
I
B
Base Current (DC) 0.5 A
P
C
Collector Dissipation (T
C
= 25°C) 40 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Conditions Min. Typ. Max Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= 500µA, I
E
= 0 600 V
BV
CER
Collector-Emitter Breakdown Voltage I
C
= 1mA, R
BE
= 330Ω 600 V
BV
CEO(sus)
Collector-Emitter Sustaining Voltage I
C
= 1.5A, I
B
= 50mA, L = 25mH 275 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 500µA, I
C
= 0 10 V
I
CBO
Collector Cut-off Current V
CB
= 600V, I
E
= 0 0.1 mA
I
EBO
Emitter Cut-off Current V
EB
= 10V, I
C
= 0 0.1 mA
h
FE
DC Current Gain V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
1000
1000
5000
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 20mA 1.5 V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= 2A, I
B
= 5mA 6.0 V
C
ob
Output Capatitance V
E
= 10V, I
E
= 0, f = 1MHz 110 pF
TO-220
1.Base 2.Collector 3.Emitter
1
Equivalent Circuit
B
E
C
R
1
R
B
R
1
2000Ω≅
R
B
700Ω≅