50C02SS
器件描述：Low-Frequency General-Purpose Amplifier Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：44.16KB，共4页
Sponsor by e络盟器件资料摘要：
50C02SS
No.7519-1/4
Applications
• Low-frequency Amplifer, high-speed switching,
small motor drive, muting circuit.
Features
• Large current capacitance.
• Low collector-to-emitter saturation voltage (resistance).
R
CE
(sat) typ=175mΩ [I
C
=0.5A, I
B
=50mA].
• Ultrasmall package facilitates miniaturization in end
products.
•
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
60 V
Collector-to-Emitter Voltage V
CEO
50 V
Emitter-to-Base Voltage V
EBO
5V
Collector Current I
C
400 mA
Collector Current (Pulse) I
CP
800 mA
Collector Dissipation P
C
Mounted on a glass-epoxy board (205 305 1.6mm) 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=40V, I
E
=0 100 nA
Emitter Cutoff Current I
EBO
V
EB
=4V, I
C
=0 100 nA
DC Current Gain h
FE
V
CE
=2V, I
C
=10mA 300 800
Gain-Bandwidth Product f
T
V
CE
=10V, I
C
=50mA 500 MHz
Marking : YN Continued on next page.
NPN Epitaxial Planar Silicon Transistor
Ordering number : ENN7519
50C02SS
52703 TS IM TA-100152
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2159A
[50C02SS]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0.6
0.25
0.2
0.07
0.07
1.4
0.45
1
3
2
0.3
0.3
1.40.8
0.1
1
3
2
Top View
Side View
Side View
Bottom View
No.7519-1/4
Applications
• Low-frequency Amplifer, high-speed switching,
small motor drive, muting circuit.
Features
• Large current capacitance.
• Low collector-to-emitter saturation voltage (resistance).
R
CE
(sat) typ=175mΩ [I
C
=0.5A, I
B
=50mA].
• Ultrasmall package facilitates miniaturization in end
products.
•
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
60 V
Collector-to-Emitter Voltage V
CEO
50 V
Emitter-to-Base Voltage V
EBO
5V
Collector Current I
C
400 mA
Collector Current (Pulse) I
CP
800 mA
Collector Dissipation P
C
Mounted on a glass-epoxy board (205 305 1.6mm) 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=40V, I
E
=0 100 nA
Emitter Cutoff Current I
EBO
V
EB
=4V, I
C
=0 100 nA
DC Current Gain h
FE
V
CE
=2V, I
C
=10mA 300 800
Gain-Bandwidth Product f
T
V
CE
=10V, I
C
=50mA 500 MHz
Marking : YN Continued on next page.
NPN Epitaxial Planar Silicon Transistor
Ordering number : ENN7519
50C02SS
52703 TS IM TA-100152
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2159A
[50C02SS]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0.6
0.25
0.2
0.07
0.07
1.4
0.45
1
3
2
0.3
0.3
1.40.8
0.1
1
3
2
Top View
Side View
Side View
Bottom View