SOT23 PNP SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 1995 a37
PARTMARKING DETAILS BSS69 - L2
BSS70 - L3
BSS69R - L6
BSS70R - L7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-40 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-200 mA
Continuous Collector Current I
C
-100 mA
Base Current I
B
-50 mA
Power Dissipation at T
amb
=25 C P
TOT
330 mW
Operating and Storage Temperature Range t
j
:t
stg
-55 to +150 C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage VG28G42G52G29G43G45G4f -40 V IG43=-1mA
Collector-Base Breakdown Voltage VG28G42G52G29G43G42G4f -40 V I
G43=-10µA
Emitter-Base Breakdown Voltage VG28G42G52G29G45G42G4f -5 V I
G45=-10µA
Collector- Emitter Cut-off Current IG43G45G53 -50 nA VG43G45G53=-30V
Collector-Emitter
Saturation Voltage
VG43G45G28G73G61G74G29 -0.25
-0.40
V
V
IG43=-10mA, IG42=-1mA
IG43=-50mA, IG42=-5mA*
Base-Emitter Saturation Voltage VG42G45G28G73G61G74G29 -0.65 -0.85
-0.95
V
V
I
C
=-10mA, IG42=-1mA
IG43=-50mA, IG42=-5mA*
Static Forward Current BSS69
Transfer Ratio
hG46G45 30
40
50
30
15
150
IG43=-100µA,
IG43=-1mA,
IG43=-10mA, VG43G45=-1V
IG43=-50mA*,
IG43=-100mA*,
Static Forward Current BSS70
Transfer Ratio
hG46G45 60
80
100
60
30
300
IG43=-100µA,
IG43=-1mA,
IG43=-10mA, VG43G45=-1V
IG43=-50mA*,
IG43=-100mA*,
Transition Frequency BSS69
BSS70
fG54 200
250
MHz
MHz
IG43=-10mA, VG43G45=-20V
f=100MHz
Collector-Base Capacitance CG6fG62G6f 4.5 pF VG43G42=-5V, f=100kHz
Emitter-Base Capacitance CG69G62G6f 10 pF VG45G42=-0.5V, f=100kHz
Noise Figure N Typ. 5 dB I
G43=-100µΑ, VG43G45=-5V
RG53=1kΩ, f=10Hz to15.7 kHz
Switching times: Delay; Rise
Storage Time
Fall Time
tG64; tG66
tG73
tG66
35
225
70
ns
ns
ns
VG43G43=-3V, IG43=-10mA
IG42G31= IG42G32 =-1mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
BSS69
BSS70
C
B
E
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