SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
*High V
CEO
* Low saturation voltage
COMPLEMENTARY TYPE: BSP20
PARTMARKING DETAIL: BSP15

ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-200 V
Collector-Emitter Voltage V
CEO
-200 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-1 A
Continuous Collector Current I
C
-0.5 A
Power Dissipation at T
amb
=25 C P
tot
2W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-200 V I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-200 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5 V I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-1 µA V
CB
=-175V
Emitter Cut-Off Current I
EBO
-20 µA V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
- 2.0
-0.5
V
V
I
C
=-50mA, I
B
=-5mA*
I
C
=-30mA, I
B
=-3mA*
Static Forward Current
Transfer Ratio
h
FE
30 150 I
C
=-50mA, V
CE
=-10V*
Transition Frequency f
T
15 MHz I
C
=-10mA, V
CE
=-20V*
f = 20MHz
Output Capacitance C
obo
15 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA92 datasheet.
BSP15
C
C
E
B
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