COMSET SEMICONDUCTORS 1/3
.
BDY53 – BDY54
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDY53 60
V
CEO
Collector-Emitter Voltage
BDY54 120
V
BDY53 100
V
CBO
Collector-Base Voltage
BDY54 180
V
V
EBO
Emitter-Base Voltage
BDY53
BDY54
7V
I
C
Collector Current
BDY53
BDY54
12 A
I
B
Base Current
BDY53
BDY54
5 A
P
TOT
Power Dissipation @ T
C
= 25°
BDY53
BDY54
60 Watts
T
J
Junction Temperature
BDY53
BDY54
200 °C
T
Stg
Storage Temperature
BDY53
BDY54
-65 to +200 °C
LF Large Signal Power Amplification
High Current Fast Switching
NPN SILICON TRANSISTORS, DIFFUSED MESA