BDX14A
器件描述:PNP SILICON TRANSISTOR, EPITAXIAL BASE
文件大小:15.06KB,共2页
Sponsor by e络盟
器件资料摘要:
- 90V
- 55V
- 60V
- 90V
-7V
-4V
-2V
29W
200°C
–65 to 200°C
6°C / W
BDX14AA
Prelim. 02/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
PNP
SILICON TRANSISTOR,
EPITAXIAL BASE
FEATURES:
LF Large Signal Power Amplification
Medium Current Switching
V
CBO
Collector – Base Voltage (Open Emitter)
V
CEO
Collector – Emitter Voltage (Open Base)
V
CER
Collector – Emitter Voltage R
BE
=100G57
V
CEX
Collector – Base Voltage V
BE
= +1.5V
V
EBO
Emitter – Base Voltage
I
C
Collector Current
I
B
Base Current
P
tot
Power Dissipation
T
J
Maximum Junction Temperature
T
STG
Storage Temperature
R
th-(j-c)
Junction to Case.
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
24.33 (0.958) 24.43 (0.962)
14.48 (0.570) 14.99 (0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028) 0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470) 12.70 (0.500)
TO66 Package.
Pin 1 – Base Pin 2 – Emitter Case - Collector