BIPOLARICS, INC. Part Number B15V140

MEDIUM POWER SILICON MICROWAVE TRANSISTOR
SYMBOL PARAMETERS & CONDITIONS UNIT MIN. TYP. MAX.
V
CE
= 10V, I
C
=70 mA, Class A, unless stated
(1) Depends on package
C
CB
Collector Base Capacitance: V
CB
=10V f = 1MHz pF .75
f
t
Gain Bandwidth Product GHz 8.0
|S
21
|
2
Insertion Power Gain: f = 1.0 GHz dB 15.6
f = 2.0 GHz dB 9.0
P
1dB
Power output at 1dB compression: f = 1.0 GHz dBm 27.0
NF Noise Figure: V
CE
=8V, I
C
=20 mA f = 1.0 GHz dB 1.6
h
FE
Forward Current Transfer Ratio: V
CE
= 8V, I
C
=15 mA 30 100 300
I
CBO
Collector Cutoff Current : V
CB
=10V µA 0.4
I
C
= 75 mA
FEATURES:
• High Gain Bandwidth Product
f
t
= 8 GHz typ @ I
C
= 70 mA
• High Gain
|S
21
|
2
= 15.6 dB @ 1.0 GHz
9.0 dB @ 2.0 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T
A
= 25
o
C)
V
CBO
Collector-Base Voltage 30 V
SYMBOL PARAMETERS RATING UNITS
Absolute Maximum Ratings:
DESCRIPTION AND APPLICATIONS:
Bipolarics' B15V140 is a high performance silicon bipolar
transistor intended for medium power linear and Class C
applications at VHF, UHF and microwave frequencies in 7.2
and 12V systems. Depending on package type, the B15V140
can operate at up to 0.5W. These applications include high
intermod receivers, CATV and instrumentation amplifiers as
well as pre-drivers, drivers and final stages in transmitter
applications such as cellular telephone. Package options in-
clude Dice, SOT-223 Surface Mount, Ceramic Micro-X,
0.145" Plastic SOT-103 and 0.230" power flange package.
PRODUCT DATA SHEET
MAX
(1)
V
CEO
Collector-Emitter Voltage 15 V
V
EBO
Emitter-Base Voltage 1.5 V
I
C
Collector Current (continuous) 120 mA
I
C
Collector Current (instantaneous) 180 mA
T
J
Junction Temperature 200
o
C
T
STG
Storage Temperature -65 to 150
o
C