1
Publication date: December 2003 SJJ00264BED
Composite Transistors
XN01558
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD2623 × 2
■ Absolute Maximum Ratings T
a
= 25°C
1: Collector (Tr1) 4: Emitter
2: Collector (Tr2) 5: Base (Tr1)
3: Base (Tr2)
EIAJ: SC-74A Mini5-G1 Package
Unit: mm
2.90
1.9±0.1
0.16
+0.10
–0.06
2.8
+0.2 –0.3
1.1
+0.3 –0.1
1.1
0 to 0.1
+0.2 –0.1
1.50
(0.65)
0.4
±
0.2
+0.25 –0.05
(0.95) (0.95)
0.30
+0.10
–0.05
543
12
+0.20
–0.05
5˚
10˚
2
Tr1Tr2
4
1
53
■ Electrical Characteristics T
a
= 25°C ± 3°C
Internal Connection
Marking Symbol: 4Z
V
V
1 kΩ
R
on
=
V
B
× 1 000

(Ω)
V
A
− V
B
f = 1 kHz
V = 0.3 V
V
B
I
B
= 1 mA
V
A
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
25 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
12 V
Collector current I
C
0.5 A
Peak collector current I
CP
1A
Total power dissipation P
T
300 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 025V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 012
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 25 V, I
E
= 0 100 nA
Forward current transfer ratio
*
1
h
FE
V
CE
= 2 V, I
C
= 0.5 A 200 800 
h
FE
ratio
*
1, 2
h
FE(Small
V
CE
= 2 V, I
C
= 0.5 A 0.50 0.99 
/Large)
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= 0.5 A, I
B
= 20 mA 0.14 0.40 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= 0.5 A, I
B
= 50 mA 1.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 10 pF
(Common base, input open circuited)
ON resistanse
*
3
R
on
1.0 Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL
*
3: R
on
test circuit
STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Ratio between one and another device