SIGC156T120R2C

Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
IGBT Chip in NPT-technology


This chip is used for:
• power module
BSM100GD120DN2
FEATURES:
• 1200V NPT technology 200µm chip
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
• integrated gate resistor

Applications:
• drives
G
C
E

Chip Type VCE ICn Die Size Package Ordering Code
SIGC156T120R2C 1200V 100A 12.59 X 12.59 mm2 sawn on foil Q67041-A4661-A003



MECHANICAL PARAMETER:
Raster size 12.59 X 12.59
Emitter pad size 8 x ( 3.98 x 2.38 )
Gate pad size 1.46 x 0.8
Area total / active 158.5 / 132.6
mm2
Thickness 200 µm
Wafer size 150 mm
Flat position 90 grd
Max.possible chips per wafer 82 pcs
Passivation frontside Photoimide
Emitter metallization 3200 nm Al Si 1%
Collector metallization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond Al, <500µm
Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm
Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C