Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
360 415
400 460
R
θJL
300 350
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
V
Gate-Source Voltage ±8 V
I
D
0.9
Drain-Source Voltage 20
T
A
=25°C
P
D
0.3
AT
A
=70°C 0.7
Pulsed Drain Current
B
5
Continuous Drain
Current
A
T
A
=25°C
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
T
A
=70°C 0.19
Junction and Storage Temperature Range -55 to 150 °C
Power Dissipation
A
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
AO7800
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 0.9 A (V
GS
= 4.5V)
R
DS(ON)
< 300mΩ (V
GS
= 4.5V)
R
DS(ON)
< 350mΩ (V
GS
= 2.5V)
R
DS(ON)
< 450mΩ (V
GS
= 1.8V)
General Description
The AO7800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.It
is ESD protected. Standard Product AO7800 is Pb-
free (meets ROHS & Sony 259 specifications).
AO7800L is a Green Product ordering option.
AO7800 and AO7800L are electrically identical.
SC-70-6
(SOT-323)
Top View
D1
S1
G1
D2
S2
G2
S2D2
G2
D1
G1
S1
Alpha Omega Semiconductor, Ltd.