Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
300 360
350 425
R
θJL
280 320
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±12Gate-Source Voltage
Drain-Source Voltage -20
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
-1.2
-3Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
0.35
0.22
-55 to 150
T
A
=70°C
I
D
-1.4
AO7413
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -20V
I
D
= -1.4A (V
GS
= -10V)
R
DS(ON)
< 113mΩ (V
GS
= -10V)
R
DS(ON)
< 135mΩ (V
GS
= -4.5V)
R
DS(ON)
< 180mΩ (V
GS
= -2.5V)
General Description
The AO7413 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge, and operation with gate
voltages as low as 1.8V, in the small SOT323 footprint. It
can be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. It is ESD protected to 2KV HBM. Standard
Product AO7413 is Pb-free (meets ROHS & Sony 259
specifications). AO7413L is a Green Product ordering
option. AO7413 and AO7413L are electrically identical.
S
G
D
SC-70
(SOT-323)
Top View
D
S
G
Alpha & Omega Semiconductor, Ltd.