Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
300 360
340 425
R
θJL
280 320Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
T
A
=70°C 0.22
Junction and Storage Temperature Range -55 to 150 °C
Power Dissipation
A
T
A
=25°C
P
D
0.35
AT
A
=70°C 1.2
Pulsed Drain Current
B
10
Continuous Drain
Current
A
T
A
=25°C
I
D
1.6
Drain-Source Voltage 20 V
Gate-Source Voltage ±8 V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
AO7402
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 1.6 A (V
GS
= 4.5V)
R
DS(ON)
< 90mΩ (V
GS
= 4.5V)
R
DS(ON)
< 105mΩ (V
GS
= 2.5V)
R
DS(ON)
< 130mΩ (V
GS
= 1.8V)
General Description
The AO7402 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V, in the small SOT323 footprint. It can
be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. Standard Product AO7402 is Pb-free (meets ROHS
& Sony 259 specifications). AO7402L is a Green Product
ordering option. AO7402 and AO7402L are electrically
identical.
G
D
S
S
G
D
SC-70
(SOT-323)
Top View
Alpha Omega Semiconductor, Ltd.