Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
300 360
340 425
R
θJL
280 320
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
V
Gate-Source Voltage ±8 V
I
D
1
Drain-Source Voltage 20
T
A
=25°C
P
D
0.35
AT
A
=70°C 0.75
Pulsed Drain Current
B
5
Continuous Drain
Current
A
T
A
=25°C
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
T
A
=70°C 0.22
Junction and Storage Temperature Range -55 to 150 °C
Power Dissipation
A
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
AO7404
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 1 A (V
GS
= 4.5V)
R
DS(ON)
< 225mΩ (V
GS
= 4.5V)
R
DS(ON)
< 290mΩ (V
GS
= 2.5V)
R
DS(ON)
< 425mΩ (V
GS
= 1.8V)
General Description
The AO7404 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.It
is ESD protected to 1KV HBM. Standard Product
AO7404 is Pb-free (meets ROHS & Sony 259
specifications). AO7404L is a Green Product
ordering option. AO7404 and AO7404L are
electrically identical.
S
G
D
SC-70
(SOT-323)
Top View
D
S
G
Alpha Omega Semiconductor, Ltd.