Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
78 110
106 150
R
θJL
64 80
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics each FET
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±20Gate-Source Voltage
Drain-Source Voltage 30
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
2.4
12Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
1.15
0.73
-55 to 150
T
A
=70°C
I
D
3.1
AO6802
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 3.1 A (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 10V)
R
DS(ON)
< 115mΩ (V
GS
= 4.5V)
General Description
The AO6802 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO6802 is Pb-free
(meets ROHS & Sony 259 specifications). AO6802L
is a Green Product ordering option. AO6802 and
AO6802L are electrically identical.
G1
D1
S1
TSOP6
Top View
G2
S2
G1
D2
S1
D11
2
3
6
5
4
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.