Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
200
Maximum Junction-to-Lead
C
Steady-State 52 80
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
129 160
°C/W
Maximum Junction-to-Ambient
A
Steady-State
158
90
°C/W
Maximum Junction-to-Ambient
A
Steady-State
102 130
Maximum Junction-to-Lead
C
Steady-State 51 80
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
70
Parameter: Thermal Characteristics MOSFET Typ Max
W
0.89 0.5
Junction and Storage Temperature Range -55 to 150 -55 to 150
Power Dissipation
P
D
1.39 0.78
A1
Pulsed Forward Current
B
10
Schottky reverse voltage 20
Continuous Forward Current
A
I
F
1.5
A2.9
Pulsed Drain Current
B
10
Gate-Source Voltage ±12
Continuous Drain Current
A
I
D
3.6
Parameter MOSFET Schottky
Drain-Source Voltage 30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AO6704
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 3.6A (V
GS
= 10V)
R
DS(ON)
< 65mΩ (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 4.5V)
R
DS(ON)
< 160mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO6704 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch, or
for DC-DC conversion applications. Standard Product
AO6704 is Pb-free (meets ROHS & Sony 259
specifications). AO6704L is a Green Product ordering
option. AO6704 and AO6704L are electrically
identical.
A
K
G
D
S
TSOP6
Top View
G
S
K
D
D
A1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.