Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter MOSFET Schottky
Drain-Source Voltage 20
Gate-Source Voltage ±8
Continuous Drain Current
A
I
D
3.8
A3
Pulsed Drain Current
B
10
Schottky reverse voltage 20
Continuous Forward Current
A
I
F
2
A1
Pulsed Forward Current
B
10
W
0.7 0.59
Junction and Storage Temperature Range -55 to 150 -55 to 150
Power Dissipation
P
D
1.15 0.92
Parameter: Thermal Characteristics MOSFET Typ Max
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
80.3 110
°C/W
Maximum Junction-to-Ambient
A
Steady-State
117 150
Maximum Junction-to-Lead
C
Steady-State 43 80
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
109.4 135
°C/W
Maximum Junction-to-Ambient
A
Steady-State
136.5 175
Maximum Junction-to-Lead
C
Steady-State 58.5 80
AO6702
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 20V
I
D
= 3.8A (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 4.5V)
R
DS(ON)
< 65mΩ (V
GS
= 2.5V)
R
DS(ON)
< 95mΩ (V
GS
= 1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO6702 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6702 is Pb-free (meets ROHS & Sony
259 specifications). AO6702L is a Green Product ordering
option. AO6702 and AO6702L are electrically identical.
TSOP6
A
K
G
D
S
G
S
A
D
N/C
K1
2
3
6
5
4