Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter MOSFET Schottky
Drain-Source Voltage -30
Gate-Source Voltage ±12
Continuous Drain Current
A
I
D
-2.3
A-1.8
Pulsed Drain Current
B
-15
Schottky reverse voltage 20
Continuous Forward Current
A
I
F
2
A1
Pulsed Forward Current
B
10
W
0.7 0.59
Junction and Storage Temperature Range -55 to 150 -55 to 150
Power Dissipation
P
D
1.15 0.92
Parameter: Thermal Characteristics MOSFET Typ Max
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
78 110
°C/WMaximum Junction-to-Ambient
A
Steady-State
106 150
Maximum Junction-to-Lead
C
Steady-State 64 80
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
109.4 135
°C/WMaximum Junction-to-Ambient
A
Steady-State
136.5 175
Maximum Junction-to-Lead
C
Steady-State 58.5 80
AO6701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -30V
I
D
= -2.3A (V
GS
= -10V)
R
DS(ON)
< 135mΩ (V
GS
= -10V)
R
DS(ON)
< 185mΩ (V
GS
= -4.5V)
R
DS(ON)
< 265mΩ (V
GS
= -2.5V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO6701 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6701 is Pb-free (meets ROHS & Sony
259 specifications). AO6701L is a Green Product ordering
option. AO6701 and AO6701L are electrically identical.
TSOP6
G
S
A
D
N/C
K1
2
3
6
5
4
A
K
G
D
S