Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
47.5 62.5
74 110
R
θJL
37 50
Junction and Storage Temperature Range
A
P
D
°C
2
1.44
-55 to 150
T
A
=70°C
I
D
-5
-4.2
-30Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage -30
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AO6401
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -5 A (V
GS
= -10V)
R
DS(ON)
< 49mΩ (V
GS
= -10V)
R
DS(ON)
< 64mΩ (V
GS
= -4.5V)
R
DS(ON)
< 119mΩ (V
GS
= -2.5V)
General Description
The AO6401 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO6401 is Pb-free
(meets ROHS & Sony 259 specifications). AO6401L
is a Green Product ordering option. AO6401 and
AO6401L are electrically identical.
TSOP6
Top View
G
D
S
G
D
D
S
D
D1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.