Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
47.5 62.5
74 110
R
θJL
37 50
Junction and Storage Temperature Range
A
P
D
°C
2
1.44
-55 to 150
T
A
=70°C
I
D
-6
-5
-30Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage -30
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AO6403
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -6 A (V
GS
= -10V)
R
DS(ON)
< 35mΩ (V
GS
= -10V)
R
DS(ON)
< 58mΩ (V
GS
= -4.5V)
General Description
The AO6403 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. It may be used in
common-drain configuration to form a bidirectional
blocking switch. AO6403 is Pb-free (meets ROHS &
Sony 259 specifications). AO6403L is a Green
Product ordering option. AO6403 and AO6403L are
electrically identical.
TSOP6
Top View
G
D
S
G
D
D
S
D
D1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.