Symbol Max Q2 Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
FM
T
J
, T
STG
Gate-Source Voltage ±20
30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
W
-55 to 150 -55 to 150Junction and Storage Temperature Range
2
1.28 1.28
T
A
=25°C
T
A
=70°C
2
A6.7
40 40
8.3
7.4
T
A
=25°C
T
A
=70°C
Power Dissipation
P
D
Pulsed Drain Current
B
Continuous Drain
Current
A
I
D
Maximum Schottky
Max Q1
30
±12
9.3
Units
30 V
T
A
=25°C
Parameter
Reverse Voltage
A2.2
20
3
T
A
=70°C
Pulsed Diode Forward Current
B
Continuous Forward
Current
A
P
D
I
F
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Power Dissipation
A
W
1.28
-55 to 150 °C
2
AO4918
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 9.3A (V
GS
= 10V) I
D
=8.3A (VGS = 10V
R
DS(ON)
< 14.5mΩ <18mΩ (V
GS
= 10V)
R
DS(ON)
< 16mΩ <27mΩ (V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
General Description
The AO4918 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4918 is Pb-free (meets ROHS &
Sony 259 specifications). AO4918L is a Green Product
ordering option. AO4918 and AO4918L are electrically
identical.
SOIC-8
G1
S1/A
D2
D2
D1/S2/K
D1/S2/K
D1/S2/K
G21
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.