A
Absolute Maximum Ratings T =25°C unless otherwise noted
Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage V
DS
30 30 V
Gate-Source Voltage V
GS
±20 ±20 V
Continuous Drain
Current
A
T
A
=25°C
I
D
8.5 8.5
AT
A
=70°C 6.6 6.6
Pulsed Drain Current
B
I
DM
30 30
Power Dissipation
T
A
=25°C
P
D
2 2
W
T
A
=70°C 1.28 1.28
Junction and Storage Temperature Range T
J
, T
STG
-55 to 150 -55 to 150 °C
Parameter Symbol Maximum Schottky Units
Reverse Voltage V
DS
30 V
Continuous Forward
Current
A
T
A
=25°C
I
F
3
AT
A
=70°C 2.2
Pulsed Diode Forward Current
B
I
FM
20
Power Dissipation
A
T
A
=25°C
P
D
2
W
T
A
=70°C 1.28
Junction and Storage Temperature Range T
J
, T
STG
-55 to 150 °C
AO4914A
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 8.5A (V
GS
= 10V) I
D
= 8.5A (V
GS
= 10V)
R
DS(ON)
< 18mΩ <18mΩ (V
GS
= 10V)
R
DS(ON)
< 28mΩ <28mΩ (V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
General Description
The AO4914A uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard product AO4914A is Pb-free (meets ROHS &
Sony 259 specifications). AO4914AL is a Green Product
ordering option. AO4914A and AO4914AL are
electrically identical.
SOIC-8
G2
S2
G1
S1/A
D2
D2
D1/K
D1/K1
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.