Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
Maximum Junction-to-Lead
C
Steady-State
Pulsed Forward Current
B
71
32
47.5
R
θJA
62.5Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
110
110
Maximum Junction-to-Lead
C
Steady-State 35
-55 to 150
Typ
Maximum Junction-to-Ambient
A
Steady-State
Continuous Forward Current
A
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
t ≤ 10s
Parameter
-55 to 150
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
P
D
I
D
3
A2
40
Continuous Drain Current
A
Gate-Source Voltage
Schottky
Drain-Source Voltage
I
F
40
Thermal Characteristics Schottky
62.5
40
48
74
Max
°C/W
°C/W
MOSFET
30
±12
6.9
5.8
40
2
Pulsed Drain Current
B
Junction and Storage Temperature Range
2
W
Schottky reverse voltage 30
1.441.44Power Dissipation
AO4902
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 10V)
R
DS(ON)
< 32mΩ (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
General Description
The AO4902 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two identical
MOSFETs are co-packaged in parallel with a Schottky
diode, making them ideal for many bridge and totem pole
applications, for e.g. DDR memory. Standard Product
AO4902 is Pb-free (meets ROHS & Sony 259
specifications). AO4902L is a Green Product ordering
option. AO4902 and AO4902L are electrically identical.
SOIC-8
G1
S1/A1
G2
S2/A2
D1/K1
D1/K1
D2/K2
D2/K21
2
3
4
8
7
6
5
G1
D1
S1
K1
A1
G2
D2
S2
K2
A2
Alpha & Omega Semiconductor, Ltd.