Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
50 62.5
73 110
R
θJL
31 40
W
Junction and Storage Temperature Range
A
P
D
°C
2
1.28
-55 to 150
T
A
=70°C
I
D
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
60
Maximum Junction-to-Ambient
A
Steady-State
6.3
5
40
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
B
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
AO4826
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 6.3A (V
GS
= 10V)
R
DS(ON)
< 25mΩ (V
GS
= 10V)
R
DS(ON)
< 30mΩ (V
GS
= 4.5V)
General Description
The AO4826 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4826 is Pb-free
(meets ROHS & Sony 259 specifications). AO4826L
is a Green Product ordering option. AO4826 and
AO4826L are electrically identical.
G1
D1
S1
G2
D2
S2
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.