Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
Pulsed Drain Current
B
Junction and Storage Temperature Range
2
W
Schottky reverse voltage 30
1.441.44Power Dissipation
Max
°C/W
°C/W
MOSFET
30
±12
6.9
5.8
40
2
I
F
40
Thermal Characteristics Schottky
62.5
48
55
90
Continuous Drain Current
A
Gate-Source Voltage
Schottky
Drain-Source Voltage
Parameter
-55 to 150
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
P
D
I
D
3
A2
40
Continuous Forward Current
A
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
t ≤ 10s
-55 to 150
Typ
Maximum Junction-to-Ambient
A
Steady-State
110
Maximum Junction-to-Lead
C
Steady-State 40
62.5Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
110
Maximum Junction-to-Lead
C
Steady-State
Pulsed Forward Current
B
71
32
47.5
R
θJA
AO4900A
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 10V)
R
DS(ON)
< 32mΩ (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
General Description
The AO4900A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4900A is Pb-
free (meets ROHS & Sony 259 specifications).
AO4900AL is a Green Product ordering option.
AO4900A and AO4900AL are electrically identical.
SOIC-8
G1
S1
G2
S2/A
D1
D1
D2/K
D2/K1
2
3
4
8
7
6
5
G2
D2
S2
K
A
G1
D1
S1
Alpha & Omega Semiconductor, Ltd.