Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
50 62.5
73 110
R
θJL
31 40
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±25Gate-Source Voltage
Drain-Source Voltage -30
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
-6.9
-40Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
2
1.44
-55 to 150
T
A
=70°C
I
D
-8
AO4817
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -8A (V
GS
= -20V)
R
DS(ON)
< 18mΩ (V
GS
= -20V)
R
DS(ON)
< 21mΩ (V
GS
= -10V)
ESD Rating: 1.5KV HBM
General Description
The AO4817 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected. Standard Product AO4817
is Pb-free (meets ROHS & Sony 259 specifications).
AO4817L is a Green Product ordering option.
AO4817 and AO4817L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
SOIC-8
D1
S1
G1
D2
S2
G2
Alpha & Omega Semiconductor, Ltd.