Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
45 62.5
72 110
R
θJL
34 40Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
T
A
=70°C 1.28
W
Power Dissipation
T
A
=25°C
P
D
2
AT
A
=70°C 7.5
Pulsed Drain Current
B
40
Continuous Drain
Current
A
T
A
=25°C
I
D
9.4
Drain-Source Voltage 20 V
Gate-Source Voltage ±12 V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
AO4806
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 9.4A (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 15mΩ (V
GS
= 4.5V)
R
DS(ON)
< 21mΩ (V
GS
= 2.5V)
R
DS(ON)
< 30mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AO4806 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. They
offer operation over a wide gate drive range from 1.8V
to 12V. It is ESD protected. This device is suitable for
use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
Standard Product AO4806 is Pb-free (meets ROHS &
Sony 259 specifications). AO4806L is a Green
Product ordering option. AO4806 and AO4806L are
electrically identical.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.