Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
48 62.5
74 110
R
θJL
35 40
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±20Gate-Source Voltage
Drain-Source Voltage -30
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
-4.2
-20Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
2
1.4
-55 to 150
T
A
=70°C
I
D
-5
AO4803
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -5 A (V
GS
= -10V)
R
DS(ON)
< 52mΩ (V
GS
= -10V)
R
DS(ON)
< 87mΩ (V
GS
= -4.5V)
General Description
The AO4803 uses advanced trench technology to
provide excellent R
DS(ON)
with

low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4803 is Pb-free
(meets ROHS & Sony 259 specifications). AO4803L
is a Green Product ordering option. AO4803 and
AO4803L are electrically identical.
SOIC-8
Top View
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.