Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
55 62.5
90 110
R
θJL
40 48
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
Drain-Source Voltage 30 V
Gate-Source Voltage ±12 V
AT
A
=70°C 5.8
Pulsed Drain Current
B
40
Continuous Drain
Current
A
T
A
=25°C
I
D
6.9
T
A
=70°C 1.2
W
Power Dissipation
T
A
=25°C
P
D
1.9
Steady-State
°C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
AO4800A
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 10V)
R
DS(ON)
< 32mΩ (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 2.5V)
General Description
The AO4800A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in buck
converters. Standard Product AO4800A is Pb-free
(meets ROHS & Sony 259 specifications). AO4800AL
is a Green Product ordering option. AO4800A and
AO4800AL are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
G1
D1
S1
G2
D2
S2
SOIC-8
Alpha & Omega Semiconductor, Ltd.