Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
Steady-State 30
40
Maximum Junction-to-Ambient
A
Steady-State
Power Dissipation
30Schottky reverse voltage
Continuous Forward Current
A
I
F
Pulsed Forward Current
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter MOSFET Schottky
Drain-Source Voltage -30
Gate-Source Voltage ±20
Continuous Drain Current
A
I
D
-8
A-6.6
Pulsed Drain Current
B
-40
4.4
A3.2
30
P
D
33
W
22
Junction and Storage Temperature Range -55 to 150
Parameter: Thermal Characteristics MOSFET Typ Max
-55 to 150
°C/W
54
21
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
24
75
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
36 40
°C/W
Maximum Junction-to-Ambient
A
Steady-State
67 75
Maximum Junction-to-Lead
C
Steady-State 25 30
AO4709
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -30V
I
D
= -8A (V
GS
= -10V)
R
DS(ON)
< 33mΩ (V
GS
= -10V)
R
DS(ON)
< 56mΩ (V
GS
= -4.5V)
SCHOTTKY
V
DS
(V) = 30V,IF = 3A, VF<0.5V@1A
General Description
The AO4709 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of non-
synchronous DC-DC converters. Standard Product
AO4709 is Pb-free (meets ROHS & Sony 259
specifications). AO4709L is a Green Product ordering
option. AO4709 and AO4709L are electrically identical.
G
D
S
A
K
G
S
S
A
D/K
D/K
D/K
D/K1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.