Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
Maximum Junction-to-Lead
C
Steady-State
Pulsed Forward Current
B
R
θJA
40Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
75
75
Maximum Junction-to-Lead
C
Steady-State 21
-55 to 150
Typ
Maximum Junction-to-Ambient
A
Steady-State
Continuous Forward Current
A
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
t ≤ 10s
Parameter
-55 to 150
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
P
D
I
D
4.4
A3.2
30
Continuous Drain Current
A
Gate-Source Voltage
Schottky
Drain-Source Voltage
I
F
Thermal Characteristics Schottky
40
30
28
54
Max
°C/W
°C/W
MOSFET
-30
±25
-12
-10
-60
3
Pulsed Drain Current
B
Junction and Storage Temperature Range
3
W
Schottky reverse voltage 30
2.12.1Power Dissipation
AO4703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -30V
I
D
= -12A (V
GS
=- 20V)
R
DS(ON)
< 14mΩ (V
GS
=- 20V)
R
DS(ON)
< 15mΩ (V
GS
= -10V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
General Description
The AO4703 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters. Standard Product AO4703 is Pb-free
(meets ROHS & Sony 259 specifications). AO4703L
is a Green Product ordering option. AO4703 and
AO4703L are electrically identical.
G
D
S
A
K
G
S
S
A
D/K
D/K
D/K
D/K1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.