Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
110
Maximum Junction-to-Lead
C
Steady-State 31 40
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
44 62.5
°C/W
Maximum Junction-to-Ambient
A
Steady-State
73
62.5
°C/W
Maximum Junction-to-Ambient
A
Steady-State
74 110
Maximum Junction-to-Lead
C
Steady-State 35 40
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
48
Parameter: Thermal Characteristics MOSFET Typ Max
W
1.28 1.28
Junction and Storage Temperature Range -55 to 150 -55 to 150
Power Dissipation
P
D
22
A2.6
Pulsed Forward Current
B
40
Schottky reverse voltage 30
Continuous Forward Current
A
I
F
4
A5.8
Pulsed Drain Current
B
30
Gate-Source Voltage ±20
Continuous Drain Current
A
I
D
6.9
Parameter MOSFET Schottky
Drain-Source Voltage 30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AO4700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 28mΩ (V
GS
= 10V)
R
DS(ON)
< 42mΩ (V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 4A, V
F
<0.5V@3A
General Description
The AO4700 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for non-synchronous DC-DC conversion
applications. Standard Product AO4700 is Pb-free (meets
ROHS & Sony 259 specifications). AO4700L is a Green
Product ordering option. AO4700 and AO4700L are
electrically identical.
G
S
A
A
D
D
K
K1
2
3
4
8
7
6
5
SOIC-8
A
K
G
D
S