Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
DM
T
J
, T
STG
Junction and Storage Temperature Range
Parameter Maximum Schottky Units
-55 to 150-55 to 150
Reverse Voltage 30 V
Continuous Forward
Current
A
T
A
=25°C
I
D
3
AT
A
=70°C 2
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
-30
W
8.5
6.6
30
2
1.28
-5.6
-7.1
2
1.28
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
30 -30
±20
Drain-Source Voltage
±20Gate-Source Voltage
Pulsed Forward Current
B
20
Power Dissipation
A
T
A
=25°C
P
D
2
W
T
A
=70°C 1.28
Junction and Storage Temperature Range -55 to 150 °C
AO4610
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 8.5A(V
GS
=10V) -7.1A(V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 18mΩ (V
GS
=10V) < 25mΩ (V
GS
= -10V)
< 28mΩ (V
GS
=4.5V) < 40mΩ (V
GS
= -4.5V)
V
F
<0.5V@1A
General Description
The AO4610 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications. A Schottky
diode is co-packaged with the n-channel FET
to minimize body diode losses. Standard
Product AO4610 is Pb-free (meets ROHS &
Sony 259 specifications). AO4610L is a
Green Product ordering option. AO4610
and AO4610L are electrically identical.
G1
S1
G2
S2/A
D1
D1
D2/K
D2/K1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
n-channel p-channel
G2
D2
S2
K
A
Alpha & Omega Semiconductor, Ltd.