Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Device Typ Max Units
n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
R
θJL
n-ch 35 50 °C/W
p-ch 48 62.5 °C/W
p-ch 74 110 °C/W
R
θJL
p-ch 35 50 °C/WMaximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
-20
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Steady-State
Junction and Storage Temperature Range
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
W
6
5
20
2
1.28
-4
-5
2
1.28
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
40 -40
±20
Drain-Source Voltage
±20Gate-Source Voltage
Thermal Characteristics: n-channel and p-channel
-55 to 150-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
AO4614
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 40V -40V
I
D
= 6A (V
GS
=10V) -5A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 31mΩ (V
GS
=10V) < 45mΩ (V
GS
= -10V)
< 45mΩ (V
GS
=4.5V) < 63mΩ (V
GS
= -4.5V)
General Description
The AO4614 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AO4614
is Pb-free (meets ROHS & Sony 259
specifications). AO4614L is a Green
Product ordering option. AO4614 and
AO4614L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel p-channel
Alpha & Omega Semiconductor, Ltd.