Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Typ Max
48 62.5
74 110
R
θJL
35 40
-30
±12Gate-Source Voltage
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
W
6.9
5.8
40
2
1.44
-4.2
-5
2
1.44
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
30 -30
±12
Drain-Source Voltage
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Steady-State
°C/W
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
-55 to 150-55 to 150
Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
AO4600
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 6.9A (V
GS
= 10V) -5A (V
GS
= -10V)
R
DS(ON)
< 27mΩ < 49mΩ (V
GS
=- 10V)
< 32mΩ < 64mΩ (V
GS
=- 4.5V)
< 50mΩ < 120mΩ (V
GS
= -2.5V)

General Description
The AO4600 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS
& Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are
electrically identical.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel p-channel
Alpha & Omega Semiconductor, Ltd.