Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Device Typ Max Units
n-ch 52 62.5 °C/W
n-ch 78 110 °C/W
R
θJL
n-ch 48 50 °C/W
p-ch 50 62.5 °C/W
p-ch 73 110 °C/W
R
θJL
p-ch 31 35 °C/WMaximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
-40
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Steady-State
Junction and Storage Temperature Range
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
W
4.7
4
30
2
1.44
-4.9
-5.8
2
1.44
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
30 -30
±20
Drain-Source Voltage
±12Gate-Source Voltage
Thermal Characteristics: n-channel and p-channel
-55 to 150-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
AO4603
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 4.7A (V
GS
=10V) -5.8A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 55mΩ (V
GS
=10V) < 35mΩ (V
GS
= -10V)
< 70mΩ (V
GS
=4.5V) < 58mΩ (V
GS
= -4.5V)
< 110mΩ (V
GS
= 2.5V)
General Description
The AO4603 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications.
Standard product AO4603 is Pb-free (meets
ROHS & Sony 259 specifications). AO4603L is
a Green Product ordering option. AO4603 and
AO4603L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel p-channel
Alpha & Omega Semiconductor, Ltd.