Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
24 40
54 75
R
θJL
21 30
Junction and Storage Temperature Range
A
P
D
°C
3.1
2
-55 to 150
T
A
=70°C
I
D
-4
-3.1
-20Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage -60
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AO4441
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -60V
I
D
= -4 A (V
GS
= -10V)
R
DS(ON)
< 100mΩ (V
GS
= -10V)
R
DS(ON)
< 130mΩ (V
GS
= -4.5V)
General Description
The AO4441 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4441 is Pb-free (meets ROHS & Sony 259
specifications). AO4441L is a Green Product
ordering option. AO4441 and AO4441L are
electrically identical.
SOIC-8
Top View
G
D
S
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd.