Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
38 50
69 80
R
θJL
24 30Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
T
A
=70°C 1.6
Junction and Storage Temperature Range -55 to 150 °C
Power Dissipation
T
A
=25°C
P
D
2.5
AT
A
=70°C 4
Pulsed Drain Current
B
20
Continuous Drain
Current
A
T
A
=25°C
I
D
5
Drain-Source Voltage 60 V
Gate-Source Voltage ±20 V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
AO4440
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 5A (V
GS
= 10V)
R
DS(ON)
< 55mΩ (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 4.5V)
General Description
The AO4440 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4440 is Pb-free
(meets ROHS & Sony 259 specifications). AO4440L
is a Green Product ordering option. AO4440 and
AO4440L are electrically identical
SOIC-8
G
S
S
S
D
D
D
D
G
D
S