Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
34 40
62 75
R
θJL
18 24Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
B
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
8.5
7.1
50
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
30
W
Junction and Storage Temperature Range
A
P
D
°C
3
2.1
-55 to 150
T
A
=70°C
I
D
AO4414A
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 8.5A (V
GS
= 10V)
R
DS(ON)
< 26mΩ (V
GS
= 10V)
R
DS(ON)
< 40mΩ (V
GS
= 4.5V)
General Description
The AO4414A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AO4414A is Pb-free (meets ROHS & Sony
259 specifications). AO4414AL is a Green Product
ordering option. AO4414A and AO4414AL are
electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.