Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
75 100
115 150
R
θJL
48 60
Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
T
A
=70°C 0.8
W
Power Dissipation
T
A
=25°C
P
D
1.25
AT
A
=70°C 1.7
Pulsed Drain Current
B
10
Continuous Drain
Current
A
T
A
=25°C
I
D
2.1
Drain-Source Voltage 55 V
Gate-Source Voltage ±12 V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
AO3422
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 55V
I
D
= 2.1A (V
GS
= 4.5V)
R
DS(ON)
< 160mΩ (V
GS
= 4.5V)
R
DS(ON)
< 200mΩ (V
GS
= 2.5V)
General Description
The AO3422 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. It
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch. Standard product AO3422 is Pb-free (meets
ROHS & Sony 259 specifications). AO3422L is a
Green Product ordering option. AO3422 and
AO3422L are electrically identical.
G
D
S
S
G
D
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.