Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
37 45
70 100
R
θJL
26 36Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12
Pulsed Drain Current
B
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
8.5
7.1
60
I
D
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
30
W
Junction and Storage Temperature Range
A
P
D
°C
2.8
1.8
-55 to 150
T
A
=70°C
AO4404A
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 8.5A (V
GS
= 10V)
R
DS(ON)
< 24mΩ (V
GS
= 10V)
R
DS(ON)
< 30mΩ (V
GS
= 4.5V)
R
DS(ON)
< 48mΩ (V
GS
= 2.5V)
General Description
The AO4404A uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AO4404A is Pb-free (meets ROHS & Sony
259 specifications). AO4404AL is a Green Product
ordering option. AO4404A and AO4404AL are
electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.