Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
70 90
100 125
R
θJL
63 80
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±20Gate-Source Voltage
Drain-Source Voltage -30
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
-2.2
-20Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
1.4
1
-55 to 150
T
A
=70°C
I
D
-2.6
AO3421
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -2.6 A (V
GS
= -10V)
R
DS(ON)
< 130mΩ (V
GS
= -10V)
R
DS(ON)
< 200mΩ (V
GS
= -4.5V)
General Description
The AO3421 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3421 is Pb-free
(meets ROHS & Sony 259 specifications). AO3421L
is a Green Product ordering option. AO3421 and
AO3421L are electrically identical.
S
G
D
TO-236
(SOT-23)
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.