Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage V
DS
20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain
Current
A
T
A
=25°C
I
D
6
AT
A
=70°C 5
Pulsed Drain Current
B
I
DM
25
Power Dissipation
A
T
A
=25°C
P
D
1.4
W
T
A
=70°C 0.9
Junction and Storage Temperature Range T
J
, T
STG
-55 to 150 °C
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
70 90 °C/W
Maximum Junction-to-Ambient
A
Steady-State
100 125 °C/W
Maximum Junction-to-Lead
C
Steady-State R
θJL
63 80 °C/W
AO3420
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 6 A (V
GS
= 10V)
R
DS(ON)
< 24mΩ (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 4.5V)
R
DS(ON)
< 42mΩ (V
GS
= 2.5V)
R
DS(ON)
< 55mΩ (V
GS
= 1.8V)
General Description
The AO3420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is
suitable for use as a uni-directional or bi-directional
load switch. Standard Product AO3420 is Pb-free
(meets ROHS & Sony 259 specifications). AO3420L
is a Green Product ordering option. AO3420 and
AO3420L are electrically identical.
G
D
S
S
G
D
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.