Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
65 90
85 125
R
θJL
43 60Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
T
A
=70°C 1
W
Power Dissipation
T
A
=25°C
P
D
1.4
AT
A
=70°C 4.9
Pulsed Drain Current
B
20
Continuous Drain
Current
A
T
A
=25°C
I
D
5.8
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
AO3404
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 5.8A (V
GS
= 10V)
R
DS(ON)
< 28mΩ (V
GS
= 10V)
R
DS(ON)
< 43mΩ (V
GS
= 4.5V)
General Description
The AO3404 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device may be used as a load switch or in PWM
applications. Standard Product AO3404 is Pb-free
(meets ROHS & Sony 259 specifications). AO3404L
is a Green Product ordering option. AO3404 and
AO3404L are electrically identical.
G
D
S
S
G
D
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.