Maximum Ratings Symbol Value Unit
Peak Inverse Voltage PIV 75 (Min.) Volts
Average Rectified Current I
Avg
200 mAmps
Continuous Forward Current I
Fdc
400 mAmps
Peak Surge Current (t
peak
= 1 sec.) I
peak
0.5 Amp
BKC Power Dissipation T
L
=50
o
C, L = 3/8" from body P
tot
500 mWatts
Operating Temperature Range T
Op
-65 to +200
o
C
Storage Temperature Range T
St
-65 to +200
o
C
Electrical Characteristics @ 25
o
C Symbol Minimum Maximum Unit
Forward Voltage Drop @ I
F
= 1.0 mA V
F
0.54 0.62 Volts
Forward Voltage Drop @ I
F
= 10 mA V
F
0.66 0.74 Volts
Forward Voltage Drop @ I
F
= 50 mA V
F
0.76 0.86 Volts
Forward Voltage Drop @ I
F
= 100 m V
F
0.80 0.92 Volts
Forward Voltage Drop @ I
F
= 200 mA V
F
0.87 1.0 Volts
Reverse Leakage Current @ V
R
= 50 V I
r
0.1 (100 @ 150
o
C) µA
Breakdown Voltage @ Ir = 0.1 mA PIV 75 Volts
Capacitance @ V
R
= 0 V, f = 1mHz C
T
2.5 pF
Reverse Recovery time (note 1) t
rr
4.0 nSecs
Reverse Recovery time (note 2,3) t
rr
6.0 nSecs
Forward Recovery time (note 4) V
fr
10 nSecs
Note 1: Per Method 4031-A with I
F
= I
R
= 10 to 200 mA, R
L
= 100 Ohms,recover to 0.1 If.
Note 2: Per Method 4031-A with I
F
= I
R
= 200 to 400 mA, R
L
= 100 Ohms,recover to 0.1 If.
Note 3: Per Method 4031-A with I
F
= 10 microA, Ir = 1.0 mA, recover to 0.1 mA.
Applications
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
Full approval to Mil-S-19500/231
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings
Silicon Switching Diode DO-35 Glass Package
11NNor1
1N
1N4150
or
1N4150-1
Note 4: Per Method 4026 with I
F
= 200 mA, Ir = 1.0 mA, recover to 0.1 mA.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
DO-35 Glass Package
Dia.
0.06-0.09"


1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-mm
1.53-2.28 mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.