Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
R
θJA 41 50
R
θJC
3.6 5Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage 25
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C I
D
25
25
70
Junction and Storage Temperature Range
A
P
D
°C
30
15
-55 to 175
T
C
=100°C
A
mJ
Avalanche Current
C
20
Repetitive avalanche energy 0.1mH
C
20
AOU460
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 25V
I
D
= 25 A (V
GS
= 10V)
R
DS(ON)
< 14 mΩ (V
GS
= 10V)
R
DS(ON)
< 24 mΩ (V
GS
= 4.5V)
General Description
The AOU460 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU460 is Pb-free (meets ROHS & Sony
259 specifications). AOU460L is a Green Product
ordering option. AOU460 and AOU460L are
electrically identical.
G
D
S
Top View
Drain Connected
to Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.