Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
R
θJA 100 125
R
θJL
0.7 1.5
V±20
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
°C/W
Pulsed Drain Current
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
Power Dissipation
B
T
C
=25°C
P
D
Avalanche Current
C
Junction and Storage Temperature Range
Repetitive avalanche energy L=0.1mH
C
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
C
=25°C
G
T
C
=100°C
B
30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
85
73 AI
D
200
-55 to 175
mJ
W
50
°C
100
T
C
=100°C
140
30 A
AOU414
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 5.7mΩ (V
GS
= 10V)
R
DS(ON)
< 7.5mΩ (V
GS
= 4.5V)
General Description
The AOU414 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. Standard Product AOU414 is Pb-
free (meets ROHS & Sony 259 specifications).
AOU414L is a Green Product ordering option.
AOU414 and AOU414L are electrically identical.
G
D
S
Top View
Drain
Connected to
Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.