Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
R
θJA 105 125
R
θJL
1 1.5
T
C
=100°C
I
D
85
65
W
Junction and Storage Temperature Range
A
P
D
°C
100
50
-55 to 175
120 mJ
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
C
=25°C
G
T
C
=100°C
B
30
200
Avalanche Current
C
30
Pulsed Drain Current
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Drain-Source Voltage
A
Repetitive avalanche energy L=0.1mH
C
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
°C/WMaximum Junction-to-Ambient
A
Steady-State
AOU412
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 7.5mΩ (V
GS
= 10V)
R
DS(ON)
< 11mΩ (V
GS
= 4.5V)
General Description
The AOU412 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOU412 is Pb-free (meets ROHS
& Sony 259 specifications). AOU412L is a Green
Product ordering option. AOU412 and AOU412L are
electrically identical.
G
D
S
Top View
Drain
Connected to
Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.