Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
16.7 25
40 50
R
θJC
1.8 2.5Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
T
A
=70°C 1.6
Junction and Storage Temperature Range -55 to 175
Power Dissipation
A
T
A
=25°C
P
DSM
2.5
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25°C
P
D
W
T
C
=100°C
Avalanche Current
C
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
A
=25°C
G
T
A
=100°C
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
Gate-Source Voltage
Drain-Source Voltage -30
Pulsed Drain Current
-18
-18
-40
°C
V
V±20
30
A
-18
40
60
AOU405
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -18A (V
GS
= -10V)
R
DS(ON)
< 34mΩ (V
GS
= -10V)
R
DS(ON)
< 60mΩ (V
GS
= -4.5V)
General Description
The AOU405 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the TO-251 package, this device is well suited for
high current load applications. Standard Product
AOU405 is Pb-free (meets ROHS & Sony 259
specifications). AOU405L is a Green Product
ordering option. AOU405 and AOU405L are
electrically identical.
G
D
S
Top View
Drain Connected
to Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.