Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
R
θJA 100 125
R
θJC
1.9 2.5
W
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage -60
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C I
D
-26
-18
-60
Junction and Storage Temperature Range
A
P
D
°C
60
30
-55 to 175
T
C
=100°C
Avalanche Current
C
-26
Repetitive avalanche energy L=0.1mH
C
134
A
mJ
AOU401
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -60V
I
D
= -26 A (V
GS
= -10V)
R
DS(ON)
< 40 mΩ (V
GS
= -10V) @ 20A
R
DS(ON)
< 55 mΩ (V
GS
= -4.5V)
General Description
The AOU401 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU401 is Pb-free (meets ROHS & Sony
259 specifications). AOU401L is a Green Product
ordering option. AOU401 and AOU401L are
electrically identical.
G
D
S
Top View
Drain Connected
to Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.