Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
R
θJA
115 140
R
θJC
4.5 7.5
A
mJ
Avalanche Current
C
10
Repetitive avalanche energy L=0.1mH
C
15
10
20
Junction and Storage Temperature Range
A
P
D
°C
20
10
-55 to 175
T
C
=100°C
T
C
=25°C
Continuous Drain
Current
G
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C I
D
10
W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±25Gate-Source Voltage
Drain-Source Voltage 75
Pulsed Drain Current
C
Power Dissipation
B
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
Steady-State °C/W
AOU404
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 75V
I
D
= 10 A (V
GS
= 20V)
R
DS(ON)
< 130 mΩ (V
GS
= 20V) @ 5A
R
DS(ON)
< 140 mΩ (V
GS
= 10V)
R
DS(ON)
< 165 mΩ (V
GS
= 4.5V)
General Description
The AOU404 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU404 is Pb-free (meets ROHS & Sony
259 specifications). AOU404L is a Green Product
ordering option. AOU404 and AOU404L are
electrically identical.
G
D
S
Top View
Drain Connected
to Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.